An Optimization of Desaturation Short-Circuit Protection for SiC MOSFET Module

SiC MOSFET is widely used in various power electronic converters due to its excellent performance such as high breakdown voltage, high switching speed and low conduction loss. However, the high switching speed and weak short-circuit tolerance of SiC MOSFET bring new challenges to short-circuit protection technology. In this paper, the working principle of the traditional desaturation protection circuit based on GD3160 driver chip is analyzed and optimized. A method based on drain voltage and gate voltage to accelerate the short-circuit protection response is proposed. In order to verify the effectiveness of the proposed method, this paper completes the simulation analysis of the traditional desaturation protection circuit and the optimized desaturation circuit through LTspice. The results show that the method based on drain and gate voltage to accelerate the shortcircuit protection response has a significant advantage in improving the short-circuit protection response speed, which can effectively improve the short-circuit protection performance of SiC MOSFET.