Thermal Analysis of Gallium Oxide Devices Under Various Package Structures

Gallium Oxide <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\text{Ga}_{2} \mathrm{O}_{3})$</tex> devices offer a unique combination of high breakdown voltage, low power dissipation, and economical manufacturing, but low thermal conductivity severely limits their performance. An efficient heat dissipation package is key to the application of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Ga}_{2} \mathrm{O}_{3}$</tex> devices. In this paper, finite element (FE) models of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Ga}_{2} \mathrm{O}_{3}$</tex> modules with press-pack, wire-bonded and TO packages were established, and the thermal distribution under steady-state rated conditions and transient surge conditions were simulated and compared. First, FE models of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$700 ~\mathrm{V} / 10 ~\mathrm{A} \text{Ga}_{2} \mathrm{O}_{3}$</tex> diode modules with press-pack, wire-bonded, and TO-247 packages were proposed. Second, steady-state rated conditions and transient surge conditions were simulated respectively, and thermal analysis was performed. Finally, based on the simulation results, the trend of high-power <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Ga}_{2} \mathrm{O}_{3}$</tex> device package was analyzed and discussed. Of the three packages, the press-pack package showed the best performance both in terms of the chips thermal management at rated operating conditions and in suppressing the temperature rise during surge suppression conditions.