Thermal Field Simulation of Influence of Internal Heat Dissipation in Power Cabinet on Power Device Temperature

With the trend toward high-power and miniaturized electronic devices, thermal flux density has surged from <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$10 ~\mathrm{W} / \text{cm}^{2}$</tex> to <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$100 ~\mathrm{W} / \text{cm}^{2}$</tex>, exacerbating internal heat accumulation. Elevated temperatures significantly degrade device reliability, particularly for critical components such as IGBTs (Insulated Gate Bipolar Transistors) in power cabinets. While forced air-cooling systems are predominantly employed for thermal management, the mechanisms by which fan layout and airflow velocity influence cooling efficiency require further investigation. Additionally, since heat dissipation in power devices primarily relies on air cooling, the thermal reliability of these devices is directly tied to fan performance. To address this, COMSOL multiphysics simulations can be utilized to establish temperature field models. Through thermal source emulation and parametric analysis, the effects of fan positioning and airflow velocity on temperature distribution and their correlation with device thermal behavior can be systematically investigated. These insights enable optimized thermal design to ensure operational stability and facilitate predictive lifespan assessments of power devices.

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Published
2025-05-23
DOI
https://doi.org/10.1109/ieecsc64206.2025.11099965
Primary Topic
Power Systems and Renewable Energy
Type
article
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article

Thermal Field Simulation of Influence of Internal Heat Dissipation in Power Cabinet on Power Device Temperature

Ran Yao, Yuchi Chen, Yirun Ji, Hui Li et al.
Power Systems and Renewable Energy
article

Thermal Field Simulation of Influence of Internal Heat Dissipation in Power Cabinet on Power Device Temperature

Ran Yao, Yuchi Chen, Yirun Ji, Hui Li, Qing Huai, Wei Lai, Wenqian Yuan, Minxiang Yang, Xi Yuan
article en

Abstract

With the trend toward high-power and miniaturized electronic devices, thermal flux density has surged from <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$10 ~\mathrm{W} / \text{cm}^{2}$</tex> to <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$100 ~\mathrm{W} / \text{cm}^{2}$</tex>, exacerbating internal heat accumulation. Elevated temperatures significantly degrade device reliability, particularly for critical components such as IGBTs (Insulated Gate Bipolar Transistors) in power cabinets. While forced air-cooling systems are predominantly employed for thermal management, the mechanisms by which fan layout and airflow velocity influence cooling efficiency require further investigation. Additionally, since heat dissipation in power devices primarily relies on air cooling, the thermal reliability of these devices is directly tied to fan performance. To address this, COMSOL multiphysics simulations can be utilized to establish temperature field models. Through thermal source emulation and parametric analysis, the effects of fan positioning and airflow velocity on temperature distribution and their correlation with device thermal behavior can be systematically investigated. These insights enable optimized thermal design to ensure operational stability and facilitate predictive lifespan assessments of power devices.

Chongqing University (CN), State Grid Corporation of China (China) (CN)
Affordable and clean energy
Openalex Percentile: Top 79%
Power Systems and Renewable Energy
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Thermal Field Simulation of Influence of Internal Heat Dissipation in Power Cabinet on Power Device Temperature — Ran Yao, Yuchi Chen, et al. · (2025) | TGRS Research Map | TGRS