Aging Test Method and Analysis of Press-Pack IGBT Devices Based on the Equivalent of VSC Operation Conditions

Press-pack IGBT devices have become the preferred power devices for GW-level VSC-HVDC systems due to their advantages such as high power density per unit volume, doublesided heat dissipation, and failure short circuit. At present, the failure mechanism of press-pack IGBT is not clear. Studying its failure mechanism under VSC operating conditions is helpful to provide a basis for device state evaluation and monitoring, so as to realize intelligent operation and maintenance of engineering and reliability improvement. The difference of electrical stress between DC power cycling test and AC power cycling test of the VSC system is large, which leads to the inaccuracy of the device lifetime model based on the DC power cycling test results. Therefore, it is of great significance to carry out the research on the reliability test method of VSC submodules for reducing the system failure rate. Firstly, the simulation model of MMC submodule operating condition simulation circuit was built. Then, the hardware design of the test platform was completed and the error of the platform working condition reproduction was tested. Finally, the power cycling test of the device verifies the effectiveness of the accelerated aging test method.