Simulation Study on Device Characteristics of Presspack IGBT Chips Considering Process Defects

The Insulated Gate Bipolar Transistor (IGBT), as a power semiconductor device widely used in electronic circuits, offers advantages such as low conduction voltage, high on-state current, fast switching speed, and high input impedance. This study focuses on the press-pack IGBT structure. First, the electric field concentration caused by lateral diffusion of acceptor ions in the P-type region during chip manufacturing was analyzed. Through analytical methods, it was concluded that the electric field intensity near curved edge regions is several times higher than that in planar junction areas.Subsequently, a planar gate cell simulation model incorporating process defects of press-pack IGBT chips was developed using Sentaurus TCAD. The operating temperature of the IGBT was varied as a key parameter. By monitoring gate voltage, collector voltage, and collector current, the transfer characteristics, output characteristics, and breakdown characteristics of the IGBT under different temperatures were systematically investigated. Finally, a quantitative analysis of the maximum electric field strength between cylindrical and planar junctions within the chip was performed. The results reveal that the maximum field strength at cylindrical junctions is 2.36 times that of planar junctions. This leads to intensified electric field concentration, higher field intensity in the depletion region, and consequently a higher likelihood of avalanche breakdown in these regions.