A 4 GHz to 6 GHz LNA Design in 12-nm FinFET for Quantum Computing
This paper presents the design of a Low-Noise Amplifier (LNA) in the 4 GHz - 6 GHz band developed in a commercial 12-nm FinFET technology, for cryogenic qubit readout circuitry. The LNA proposed in this work is a common source cascode amplifier with inductive degeneration on the source able to offer more than 18.8 dB of gain in the 4 GHz - 6 GHz band along with a noise figure of about 1.5 dB at room temperature and is, therefore, a good candidate for cryogenic applications where the noise is further attenuated.
Authors
- Gianni Bosi (ORCID: https://orcid.org/0000-0001-5315-5688)
- Marcello De Matteis (ORCID: https://orcid.org/0000-0003-1061-1262)
- A. Basçhirotto (ORCID: https://orcid.org/0000-0002-8844-5754)
- Valeria Vadalà (ORCID: https://orcid.org/0000-0001-6423-8032)
- Federico D’Aniello (ORCID: https://orcid.org/0000-0002-3724-1575)
- Ciro Esposito
Institutions
- University of Milano-Bicocca (IT)
Publication Details
- Journal
- BOA (University of Milano-Bicocca)
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1109/icicdt65192.2025.11077989
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- European Commission