Low-density InAs/InP quantum dots for on-chip telecom wavelength quantum photonics

The success of photonics-based quantum information technologies relies on the availability of tunable, and deterministic single-photon sources (SPSs). In order to develop globally connected quantum photonic networks, we require these sources be compatible with pre-existing, long-haul, optical fiber networks, which operate in the low-loss telecom C-band (λ ~ 1550 nm). Semiconductor quantum dots (QDs) offer a viable route to achieve this as they can deterministically generate non-classical light at targeted wavelengths. Despite significant progress in the development of SPSs (specifically emitting at 930nm), achieving high-quality, indistinguishable single-photon emission at telecom wavelengths remains a significant challenge. Here we present a modified growth procedure to the traditional strain-driven growth of InAs/InP QDs that has enabled us to grow telecom C-band emitters at extremely low densities while maintaining high-quality quantum optical properties.