Aluminum nitride photonic integrated circuits with applications to trapped atoms

Cold atom experiments require many distinct laser wavelengths, each frequency-locked to their respective atomic transition and with precise acousto-optic and/or electro-optic modulation for shaping light pulses in frequency and intensity. These necessary optics are the primary challenge to the next generation of portable trapped atom quantum sensors. We present progress towards an optics lab-on-a-chip with on-chip laser source and modulators for portable trapped atom quantum experiments. This is achieved by leveraging the unique properties of aluminum nitride (AlN): optical transparency into the ultra-violet and non-zero electro-optic coefficient. These two features alone allow on chip integration of laser source and electro-optic modulation in the same waveguide layer. We show lasing results and new modulation results at 852 nm (S1/2-P3/2 in cesium).