Emerging Embedded Non-Volatile Memories Beyond 28nm in AI Era
Embedded Non-Volatile Memory (eNVM) is a crucial technology in various applications such as Micro Controller Units (MCUs), Data Center and Edge AI. Due to the scaling limitations of eFlash and the demand for high-performance and energy efficiency, emerging eNVM technologies such as MRAM, RRAM, and PCM are being developed below 28 nm. These emerging eNVMs have their own strengths and weaknesses, and they are expected to complement each other and coexist in the market. In this paper, we review the characteristics of these emerging eNVMs and market positioning. We also discuss our progress in eNVM solutions.
Authors
- Younghyun Kim (ORCID: https://orcid.org/0000-0002-5287-9235)
- Kangho Lee (ORCID: https://orcid.org/0000-0002-6495-5231)
- Yeongu Chung (ORCID: https://orcid.org/0000-0001-9139-0988)
- Taeyoung Lee (ORCID: https://orcid.org/0000-0003-4982-4150)
- Jieun Son (ORCID: https://orcid.org/0000-0001-6828-2639)
- Jeong-Heon Park
- Shin-Hee Han (ORCID: https://orcid.org/0000-0003-1828-9968)
- Jae-hyeon Park (ORCID: https://orcid.org/0000-0001-5201-7005)
- Jinha Park (ORCID: https://orcid.org/0000-0003-4353-1242)
- Sohee Hwang
- Boyoung Seo
- Hyun-Jin Shin
- Ghil-Seok Yang
- J. H. Jeong (ORCID: https://orcid.org/0009-0002-5670-2653)
- Kangmoon Lee
- Kyongsik Yeom
- Joosung Oh
- K. T. Nam
- Gyuseong Kang
- Seungpil Ko
- Kiseok Suh
- Ja-Hum Ku
- Yamane Kazutaka
Institutions
- Samsung (South Korea) (KR)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/vlsitechnologyandcir65189.2025.11075223
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00