High Power/PAE (27.8dBm/66%) Emode GaN-on-Si MOSHEMTs for 5V FR3 UE Annlications

Enhancement mode (Emode) GaN MOSHEMTs with high-polarization charge density barriers (AlN, InAlN) and regrown source/drain are investigated for low-voltage 6G FR3 power amplifiers. We demonstrate high output power and PAE of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\sim 27.8\text{dBm}(\sim \text{lW}/\text{mm})$</tex> and 66%, respectively, at 13GHz for 115 nm gate length Emode MOSHEMTs using an InAlN top barrier and an AlGaN/cGaN composite back barrier (BB). Furthermore, a record low total contact resistance of 0.024 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\Omega$</tex>. mm is demonstrated by incorporating highly n-doped selectively regrown (In)GaN layers on GaN channel, which, according to TCAD simulations, can further boost the output power to <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$2\mathrm{W}/\text{mm}$</tex>.