A Prototype 16Mbit RRAM on 55nm BCD with 56% Compact-Area Wordline Driver and Constant Write-Current Scheme for Automotive 150°C Operation

A prototype 16Mbit embedded RRAM macro is implemented on 55nm BCD technology targeting automotive applications. This macro implements a compact wordline driver (WLDRV) circuit using thin oxide 1.2V core MOSs and thick oxide 5V MOS devices reducing area without speed penalty. To support automotive 150°C operation, it also uses master and local current limiters and local write drivers with wide-range temperature compensation. It realizes constant cell current anywhere on a die and stable operation at 150° C. The macro density is 2.56Mbit/mm2 and operation at 150°C with 1K endurance has been achieved.