A ${G}_{\mathrm{m}}$-Boosted 3-Stage Amplifier with Gain-Enhancing Feedforward Path for $\mathrm{C}_{\mathrm{L}}$ of 40-160nF

This paper proposes a 3-stage amplifier designed to drive a load capacitor (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{C}_{\mathrm{L}}$</tex>) exceeding 100 nF. To ensure stability with a large <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{C}_{\mathrm{L}}$</tex> while achieving high DC gain and sufficient gainbandwidth (GBW), this amplifier uses a transconductance (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$G_{\mathrm{m}}$</tex>) boosting cell and a gain-enhancing feedforward path (GE-FFP). As a result, the amplifier achieves DC gain <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$&gt;130 \text{dB}$</tex>, GBW of 1.47 MHz, and phase margin (PM) of 51° when driving <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{C}_{\mathrm{L}}$</tex> of 160 nF. The chip was fabricated in a 28 nm CMOS process.