Stacked AFE-Like/FE HZO (4.5nm) to Achieve 0.75V Operating Voltage and Record Endurance Exceeding 7E12 Using Water Quenching and TiN Top Electrodes

Ultra-low operating voltage (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}_{\text {op}}$</tex>) and highly reliable metal-ferroelectric-metal (MFM) capacitors utilizing stacked AFE-like(A-L)/FE with water quenching are demonstrated. The stacked <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{A}-\mathrm{L} / \text{FE}$</tex> has 22 % reduction in <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$2 \mathrm{V}_{\mathrm{c}}$</tex> (1.4 V) in major loops than our previously reported <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\beta-\mathrm{W} / \text{FE} / \beta-\mathrm{W}$</tex> [1] with the same thickness of 4.5 nm and the similar <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$2 \mathrm{P}_{\mathrm{r}}\left(57 \text{vs} 58 \mu \mathrm{C} / \text{cm}^{2}\right)$</tex>. Water quenching further decreases <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$14 \% 2 \mathrm{V}_{c}(1.2 \mathrm{V})$</tex> due to the smaller grain size than slow cooling. The TiN top electrode is used to preserve A-L in the stacked structure after wake-up. With <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.75 \mathrm{V} \mathrm{V}_{\text {op}}$</tex> in minor loops, the TiN/A-L/FE/<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\beta-\mathrm{W}$</tex>-W capacitor with water quenching reaches record fatigue-free endurance exceeding 7E12 cycles with 2 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{P}_{\mathrm{r}}$</tex> of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$30 \mu \mathrm{C} / \text{cm}^{2}$</tex>.

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Published
2025-06-08
DOI
https://doi.org/10.23919/vlsitechnologyandcir65189.2025.11074906
Primary Topic
Advanced Machining and Optimization Techniques
Type
article
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article

Stacked AFE-Like/FE HZO (4.5nm) to Achieve 0.75V Operating Voltage and Record Endurance Exceeding 7E12 Using Water Quenching and TiN Top Electrodes

B.Y. Yu, Yan-Jyun Chen, Yun-Wen Chen, Yu-Rui Chen et al.
Advanced Machining and Optimization Techniques
article

Stacked AFE-Like/FE HZO (4.5nm) to Achieve 0.75V Operating Voltage and Record Endurance Exceeding 7E12 Using Water Quenching and TiN Top Electrodes

B.Y. Yu, Yan-Jyun Chen, Yun-Wen Chen, Yu-Rui Chen, C. W. Liu, Yuan Chen, GuanHua Chen, Jhih-Yuan Liang
article en

Abstract

Ultra-low operating voltage (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}_{\text {op}}$</tex>) and highly reliable metal-ferroelectric-metal (MFM) capacitors utilizing stacked AFE-like(A-L)/FE with water quenching are demonstrated. The stacked <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{A}-\mathrm{L} / \text{FE}$</tex> has 22 % reduction in <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$2 \mathrm{V}_{\mathrm{c}}$</tex> (1.4 V) in major loops than our previously reported <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\beta-\mathrm{W} / \text{FE} / \beta-\mathrm{W}$</tex> [1] with the same thickness of 4.5 nm and the similar <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$2 \mathrm{P}_{\mathrm{r}}\left(57 \text{vs} 58 \mu \mathrm{C} / \text{cm}^{2}\right)$</tex>. Water quenching further decreases <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$14 \% 2 \mathrm{V}_{c}(1.2 \mathrm{V})$</tex> due to the smaller grain size than slow cooling. The TiN top electrode is used to preserve A-L in the stacked structure after wake-up. With <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.75 \mathrm{V} \mathrm{V}_{\text {op}}$</tex> in minor loops, the TiN/A-L/FE/<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\beta-\mathrm{W}$</tex>-W capacitor with water quenching reaches record fatigue-free endurance exceeding 7E12 cycles with 2 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{P}_{\mathrm{r}}$</tex> of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$30 \mu \mathrm{C} / \text{cm}^{2}$</tex>.

National Taiwan University (TW)
Thailand Science Research and Innovation
Clean water and sanitation
Openalex Percentile: Top 82%
Advanced Machining and Optimization Techniques
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