$1000 \times$ Lower Leakage in High-Performance Carbon Nanotube Nanosheet Fets

This work reports a Carbon Nanotube (CNT) Nanosheet PFET with record performance (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$I_{\text{MAX}}=0.9 \text{mA} / \mu \mathrm{m}$</tex>), leakage (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$I_{\text{MIN}}$</tex> of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$20 \text{pA} / \mu \mathrm{m}$</tex>), and sub- <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{\mathrm{T}}$</tex> slope of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$93 \text{mV} / \text{dec}$</tex> at -0.5 V <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{\text{DS.}}$</tex> This result is attributed to a larger electronic bandgap which simultaneously suppresses leakage by <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\sim 1000 \times$</tex> and improves sub- <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{\mathrm{T}}$</tex> slope from 150 to <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$93 \text{mV} / \text{dec}$</tex> at <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{\text{DS}}=-0.5 \mathrm{V}$</tex>. Using planar single-CNT and network CNT FETs, we demonstrate feasibility of performance-matched NFET and PFET with larger bandgap. The future practical application of CNT electronics will be enabled by gate stack optimization and suppressed variation, for which key trends and targets are investigated by SRAM yield analysis.