A 320μm2 Minimum Guard-Band Metal Resistor-Based Temperature Sensor with +/-1.4°C Inaccuracy in 18A RibbonFet CMOS with PowerVia

A temperature sensor with a <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$320 \mu \mathrm{m}^{2}$</tex> metal resistor-based sensing element is implemented in 18A RibbonFET CMOS with back side power delivery (or PowerVia). The design supports remote sensing at any location along the metal stack, which minimizes guard bands by enabling hot-spot to sensing element distances that are <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$&lt;10 \text{um}$</tex>. The 20.5us conversion time supports sensing at multiple locations within a 1ms window. The design achieves <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$+/-1.4^{\circ} \mathrm{C}$</tex> inaccuracy, which is the lowest among resistor-based sensors in sub-22nm nodes.