First Demonstration of 3D Monolithic-Integrated BEOL OSFETs on GaN HEMTs: CEO-GaN
For the first time, we propose and demonstrate an innovative 3D monolithic Cascode Enhancement-mode (E-mode) Oxide semiconductor-integrated GaN (CEO-GaN) technology, featuring BEOL-compatible top-gate indium-tin-oxide (TG-ITO) FETs on GaN HEMTs and MISHEMTs on Si. Our device exhibits outstanding electrical performance, achieving E-mode operation, a high drain current <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\left(I_{\mathrm{D}}\right)$</tex> of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1090 \text{mA} / \text{mm}$</tex>, a high breakdown voltage (BV) of 603 V, and stable performance up to 350 K.
Authors
- Zijie Zheng (ORCID: https://orcid.org/0000-0001-8265-6019)
- Jiawei Xie (ORCID: https://orcid.org/0000-0002-1525-3380)
- Gerui Zheng (ORCID: https://orcid.org/0009-0006-0692-6404)
- Geok Ing Ng (ORCID: https://orcid.org/0000-0002-9857-4189)
- Xuanqi Chen (ORCID: https://orcid.org/0009-0002-8620-5041)
- Yuxuan Wang (ORCID: https://orcid.org/0000-0001-9153-3512)
- Wenhua Gu (ORCID: https://orcid.org/0000-0003-0695-2291)
- Hanjie Li (ORCID: https://orcid.org/0000-0002-4052-8366)
- Hanlin Xie (ORCID: https://orcid.org/0000-0002-1974-2018)
- Xiao Gong (ORCID: https://orcid.org/0000-0003-0345-5986)
- Liyan Huang (ORCID: https://orcid.org/0009-0005-0630-5838)
Institutions
- Agency for Science, Technology and Research (SG)
- National University of Singapore (SG)
- Institute of Microelectronics (CN)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/vlsitechnologyandcir65189.2025.11075225
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00