High Performance and Reliable 4F<sup>2</sup> IGZO Vertical Channel Transistor (VCT) with Extremely Low Contact Resistance and 10 year BTI lifetime for sub-10nm DRAM
For the first time, we present experimental demonstration of a high-performance and highly reliable IGZO vertical channel transistor (VCT). It exhibits excellent leakage current <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(< 0.1 \text{aA}/\mu \mathrm{m})$</tex> and switching characteristics <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(98\ \text{mV}/\text{dec})$</tex> with V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> of -0.13V at <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$85^{\circ}\mathrm{C}$</tex>. Furthermore, it provides a symmetric I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> of 49.5 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mu \mathrm{A}/\mu \mathrm{m}$</tex> at V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DD</inf> = 1.5 V which is sufficient for DRAM <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{read}/\text{write}$</tex> operations of data “0” & “1”, primarily due to the enhanced mobility and extremely low storage contact (BC) resistivity <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\rho_{\mathrm{c}},\ 3.4\times 10^{-7}\Omega\cdot \text{cm}^{2})$</tex>. To best of our know ledge, this represents the best <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\rho_{\mathrm{c}}$</tex> reported for an IGZO transistor with physical dimension below 10 nm. In addition, comprehensive analysis of temperature dependence reveals differences in I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf>, compared to conventional BCAT. In addition, its wafer level reliability (WLR) assessment indicates that stable DRAM operation c an be guaranteed longer than 10 years, inc luding static NBTI, dynamic PBTI and TDDB. This is due to proper <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$Y$</tex> controlled hydrogen <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(H)$</tex> & oxygen vacanc <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{y}(\mathrm{V}_{0})\mathrm{c}$</tex> oncentration inside IGZO channel, interfaces, and interlayer dielectrics. Measured negligible floating body effects (FBE) and self-heating effect (SHE) suggests <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$4\mathrm{F}^{2}$</tex> IGZO VCT can be an excellent candidate to sustain DRAM scaling trajectory.
Authors
- Sangmoon Lee (ORCID: https://orcid.org/0000-0001-8252-952X)
- Seong Hoon Jeong (ORCID: https://orcid.org/0000-0001-5638-2851)
- Changkyun Im (ORCID: https://orcid.org/0000-0001-9779-3841)
- Daewon Ha (ORCID: https://orcid.org/0000-0002-9061-8626)
- S. Park (ORCID: https://orcid.org/0000-0002-6811-4632)
- S.N. Kim
- Kyoung-Jun Moon (ORCID: https://orcid.org/0000-0002-2786-7865)
- Kicheon Yoo (ORCID: https://orcid.org/0000-0002-9653-8352)
- Hyungtak Kim (ORCID: https://orcid.org/0000-0003-4659-1814)
- S. J. Ahn
- Joo‐Hyung Chae (ORCID: https://orcid.org/0000-0001-6354-5612)
- Seongbin Hong (ORCID: https://orcid.org/0000-0002-6719-7608)
- J.H. Bae (ORCID: https://orcid.org/0009-0004-6000-625X)
- Kyoseung Sim (ORCID: https://orcid.org/0000-0001-5284-6831)
- Yongsug Tak (ORCID: https://orcid.org/0000-0002-2466-4448)
- Kihong Kim (ORCID: https://orcid.org/0000-0001-9965-3535)
- Yunsung Lee (ORCID: https://orcid.org/0000-0002-2512-1082)
- Chang Kyung Sung (ORCID: https://orcid.org/0000-0002-1871-850X)
- Seung‐Hwan Yoo (ORCID: https://orcid.org/0000-0003-1135-4931)
- Minsoo Kim (ORCID: https://orcid.org/0000-0001-6304-6901)
- Seung Hwan Lee (ORCID: https://orcid.org/0000-0002-5839-6533)
- Hana Cho (ORCID: https://orcid.org/0000-0002-9394-8671)
- Seong‐Hyop Kim (ORCID: https://orcid.org/0000-0001-7764-9818)
- Hee-Sun Yoon (ORCID: https://orcid.org/0000-0001-5662-8997)
- Junha Song (ORCID: https://orcid.org/0000-0003-2424-6198)
- K. Park
- M. Hong
- W. Lee
- Masayuki Terai
- I. Shin
- P. Yun
- M.H. Cho
- S.W. Park
- Seok-Hun Hyun
- Sang-Gi Byeon
Institutions
- Samsung (South Korea) (KR)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/vlsitechnologyandcir65189.2025.11074867
- Citations
- 4
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 2.92