Achieving Outstanding Endurance (&gt;10<sup>7</sup>) in Large-Array Two-Deck 16 Nm SOM Through Process, Structure, and Design Strategies for Emerging SCM Applications

We successfully demonstrated a two-deck structure selectoronly memory (SOM) based on a 16 nm half-pitch, achieving endurance exceeding 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> cycles at raw bit error rate (RBER) 200 ppm through process, structure, and design strategies. Our findings reveal that SOM endurance is not only influenced by process factors such as dual functional material (DFM) and encapsulation but also strongly depends on the spike charge. This underscores the importance of both spike charge suppression and process optimizations to enhance SOM performance.

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Published
2025-06-08
DOI
https://doi.org/10.23919/vlsitechnologyandcir65189.2025.11074870
Citations
1
Primary Topic
Advanced Surface Polishing Techniques
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article
Field-Weighted Citation Impact
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article

Achieving Outstanding Endurance (>107) in Large-Array Two-Deck 16 Nm SOM Through Process, Structure, and Design Strategies for Emerging SCM Applications

Yoe‐Sik Bae, Sun Woo Chung, Gunhyuk Park, In‐Sung Yeo et al.
1 citations
Advanced Surface Polishing Techniques
0.67
article

Achieving Outstanding Endurance (>107) in Large-Array Two-Deck 16 Nm SOM Through Process, Structure, and Design Strategies for Emerging SCM Applications

Yoe‐Sik Bae, Sun Woo Chung, Gunhyuk Park, In‐Sung Yeo, Minjae Kim, Gun Young Jung, Youngchul Sung, Sung Oh Hwang, D. S. Ahn, Jeongyee Bae, Yuichiro Cho, Minsik Lee, Taezoon Park, M. Park, S. G. Kim, Jun Hyung Lim, Sun Hee Yim, U-Yeol Park, Se‐Wook Oh, Byunghak Lee, Yongsug Tak, Jae‐Hung Han, Ji‐Man Park, Jong Eun Yeon, Nokeun Park, Soo Heung Chae, Angelo Earvin Sy Choi, Dongkoo Yun, Junghwan Kim, Woojin Lee, Ji‐Hyun Lee, Taejin Kim, Seung-Do Cha, Min-Sung Kang, Giang Do, Jaekyung Ko, Siniša Ban, J. Yi
article en
1 citations

Abstract

We successfully demonstrated a two-deck structure selectoronly memory (SOM) based on a 16 nm half-pitch, achieving endurance exceeding 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> cycles at raw bit error rate (RBER) 200 ppm through process, structure, and design strategies. Our findings reveal that SOM endurance is not only influenced by process factors such as dual functional material (DFM) and encapsulation but also strongly depends on the spike charge. This underscores the importance of both spike charge suppression and process optimizations to enhance SOM performance.

SK Group (South Korea) (KR)
Industry, innovation and infrastructure
Openalex Percentile: Top 28%
Advanced Surface Polishing Techniques
0.67
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