Power Delivery for Scaled-Out Chiplet-Based Wafer-Scale Systems with $8{\mu}\mathrm{m}$ Cu-Cu Bond Pitch on Active SI-Interconnect Fabric Substrate

Wafer-Scale chiplet-based systems allow for condensing an entire data center rack into a single advanced substrate. However, power delivery and thermal management remain challenging. We demonstrate a heterogeneously integrated voltage converter partitioned into two parts – a local utility chiplet and an active Silicon-Interconnect Fabric (Si-IF) substrate for large chiplet-based systems with a power density of 562 W/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup>, and a two-phase cooling thermal solution. These advances can be applied to a variety of power and thermal architectures for wafer-scale systems, paving the way for the development of high-performance computing (HPC) and large language model (LLM) applications that overcome the limitations of interposer and 3D packaging technologies.

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Published
2025-06-08
DOI
https://doi.org/10.23919/vlsitechnologyandcir65189.2025.11074799
Primary Topic
3D IC and TSV technologies
Type
article
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article

Power Delivery for Scaled-Out Chiplet-Based Wafer-Scale Systems with $8{\mu}\mathrm{m}$ Cu-Cu Bond Pitch on Active SI-Interconnect Fabric Substrate

Timothy S. Fisher, Krutikesh Sahoo, Behzad Razavi, Narayan K. Sundaram et al.
1 links
3D IC and TSV technologies
article

Power Delivery for Scaled-Out Chiplet-Based Wafer-Scale Systems with $8{\mu}\mathrm{m}$ Cu-Cu Bond Pitch on Active SI-Interconnect Fabric Substrate

Timothy S. Fisher, Krutikesh Sahoo, Behzad Razavi, Narayan K. Sundaram, Shrikant Singh, Haoxiang Ren, Zoe Chen, Boris Vaisband, Chih-Kong Ken Yang, Subramanian S. Iyer, Ziyi Guo, Ben Yang
article en

Abstract

Wafer-Scale chiplet-based systems allow for condensing an entire data center rack into a single advanced substrate. However, power delivery and thermal management remain challenging. We demonstrate a heterogeneously integrated voltage converter partitioned into two parts – a local utility chiplet and an active Silicon-Interconnect Fabric (Si-IF) substrate for large chiplet-based systems with a power density of 562 W/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup>, and a two-phase cooling thermal solution. These advances can be applied to a variety of power and thermal architectures for wafer-scale systems, paving the way for the development of high-performance computing (HPC) and large language model (LLM) applications that overcome the limitations of interposer and 3D packaging technologies.

UCLA Health (US)
Openalex Percentile: Top 82%
3D IC and TSV technologies
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Power Delivery for Scaled-Out Chiplet-Based Wafer-Scale Systems with $8{\mu}\mathrm{m}$ Cu-Cu Bond Pitch on Active SI-Interconnect Fabric Substrate — Timothy S. Fisher, Krutikesh Sahoo, et al. · (2025) | TGRS Research Map | TGRS