Scalable and Monolithic Integration of Quantum Dot Lasers for Silicon Photonics
We report QD laser structures grown by MOCVD on silicon and monolithic integration on silicon photonic wafers by selective area heteroepitaxy scalable to 300 mm wafers. Growth by MOCVD minimizes the gap between the QD waveguide and a silicon nitride waveguide to facilitate coupling.
Authors
- Rosalyn Koscica (ORCID: https://orcid.org/0000-0002-5485-9692)
- Bei Shi (ORCID: https://orcid.org/0000-0003-3453-2358)
- D.L. Harame (ORCID: https://orcid.org/0000-0002-4590-8114)
- Alec M. Skipper (ORCID: https://orcid.org/0000-0002-5904-7941)
- Jonathan Klamkin (ORCID: https://orcid.org/0000-0001-9911-6879)
- Simone Šuran Brunelli (ORCID: https://orcid.org/0000-0003-4324-1763)
- Matthew Dummer (ORCID: https://orcid.org/0000-0003-2446-6377)
- Joshua Herman (ORCID: https://orcid.org/0000-0002-7411-1147)
- John E. Bowers (ORCID: https://orcid.org/0000-0003-4270-8296)
- Gerald J. Leake
Institutions
- University of California, Santa Barbara (US)
- AIM Photonics (United States) (US)
- Goleta Engineering (United States) (US)
- SUNY Polytechnic Institute (US)
Publication Details
- Published
- 2025-06-16
- DOI
- https://doi.org/10.1109/oip65843.2025.11081542
- Citations
- 1
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.73