Assessment on Nanosheet Transistor Variants Beyond 2nm Node
Nanosheet (NSH) transistor benefits from its gate-all-around nature and the freedom to reduce channel thickness without pattern collapse as in FinFET to achieve the required SCE for <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{L}_{\mathrm{g}}$</tex> scaling. The possibility of stacking extra channel layers to increase effective channel width and the improved immunity to gate extension effect provide NSH and its variant forksheet (FSH) with a distinct advantage in aggressive cell height <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\text{CH})$</tex> scaling. NSH is thus the next architecture adopted before complementary field-effect transistor (CFET) is ready. This paper explores the issues encountered in CH scaling and potential integration strategies to advance NSH and FSH beyond 2 nm node.
Authors
- C.H. Hsieh (ORCID: https://orcid.org/0000-0003-4961-8779)
- C.P. Tsao
- C.T. Li (ORCID: https://orcid.org/0009-0006-2003-4306)
- K.S. Chen
- TL Lee (ORCID: https://orcid.org/0000-0002-6654-0988)
- Chih‐Hao Chang (ORCID: https://orcid.org/0000-0002-5586-9526)
- Y.H. Chen (ORCID: https://orcid.org/0009-0001-4233-4354)
- Perng‐Chih Shen (ORCID: https://orcid.org/0000-0002-9901-5274)
- Vincent S. Chang
- Y.H. Tseng
- R. Chen
- C.Y. Chen
- Chi On Chui (ORCID: https://orcid.org/0000-0001-9413-2511)
- Y. Ku (ORCID: https://orcid.org/0000-0001-7432-3230)
- P.N. Chen
- Jui‐Han Lu (ORCID: https://orcid.org/0000-0001-5970-9418)
- Bang-Li Wu
- C.J. Lin
- K. B. Huang
- Fenghuan Su (ORCID: https://orcid.org/0000-0002-7355-5715)
- M.C. Chang
- S. M. Jang
- J.A. Ng
- K.T. Lai
- S.Y. Wu (ORCID: https://orcid.org/0000-0003-1189-2932)
- Chao‐Chiun Liang
- C.C. Chen
- Tzu-Jie Lin
Institutions
- Taiwan Semiconductor Manufacturing Company (Taiwan) (TW)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/vlsitechnologyandcir65189.2025.11075146
- Citations
- 1
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.73