A -87.2 dB THD+N 89.1 dB DR Fully-Integrated Shunt-Resistor-Based In-Line Current Sensor with up to 2 MHz 14.4 V PWM Rejection
This paper presents a cost-effective, fully-integrated shunt-resistor-based in-line current sensor offering high linearity and effective PWM rejection for audio applications. To mitigate the on-chip shunt resistor self-heating, which could severely compromise the linearity of the current sensor, a thermal compensation method is proposed and improves the THD+N by up to 23.6 dB. A floating G<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</inf> stage is proposed to reject highfrequency high-voltage (HV) PWM signals at the audio amplifier switching node. Implemented in a 180 nm BCD process, the prototype achieves a peak THD + N of −87.2 dB and a DR of 89.1 dB with up to 2 MHz, 14.4 V PWM rejection,
Authors
- Marco Berkhout (ORCID: https://orcid.org/0000-0002-2166-5242)
- Huajun Zhang (ORCID: https://orcid.org/0000-0003-2899-4601)
- Qinwen Fan
- Heng Ma (ORCID: https://orcid.org/0009-0001-8795-9622)
Institutions
- United Monolithic Semiconductor (France) (FR)
- Delft University of Technology (NL)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/vlsitechnologyandcir65189.2025.11075038
- Citations
- 1
- Primary Topic
- Magnetic Field Sensors Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.73