Fully Heterogeneous and Monolithic 3D Integrated RF Platform with III-V HEMTs on Si CMOS for Next-Generation Wireless Communication Systems

In this work, we demonstrate a fully heterogeneous and monolithic 3D (HM3D) integrated RF platform, in which RF circuits are stacked on digital/analog circuits by co-integrating III-V HEMT technology and Si CMOS at the same chip. For a not only high-performance but also cost-effective and industrial-feasible approach, RF active components utilize InGaAs HEMTs, digital/analog active components are based on Si FEOL, while Si BEOL-based passive devices are shared across both. The InGaAs HEMTs are monolithically integrated on industry-standard Si CMOS, achieving record-high RF performance among M3D RF transistors. The top-tier LNA with 12.2 dB gain and 3.6 dB noise at 26.5 GHz demonstrates superior RF performance. The bottom-tier mixer and Op-Amp provide a valid analog/digital signal process without any degradation caused by the HM3D integration process.