A 212.5Gb/s Pam-4 Receiver With Mutual Inductive Coupled Gm-Tia in 4nm Finfet
This paper presents a <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$212.5 ~\text{Gb} / \mathrm{s}$</tex> PAM- 4 receiver (RX) in 4 nm FinFET. The receiver features a hybrid continuous time linear equalizer (CTLE) with stability enhanced commonmode feedback (CMFB), Gm-TIA amplifier with mutual inductive coupling, and clock distribution network using standing wave driver. The receiver occupies <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.56 ~\text{mm}^{2}$</tex> and achieves a BER of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$5.81 \mathrm{e}-6$</tex> at 212.5Gbps, with a total insertion loss of 40dB at 53.125GHz.
Authors
- Jongshin Shin (ORCID: https://orcid.org/0000-0002-4912-4974)
- Dong‐Hyuk Lim
- JungHo Do (ORCID: https://orcid.org/0000-0001-6371-7429)
- Woongtaek Lim
- Kibaek Kwon
- Byoung-Joo Yoo
- J. W. Park
- Pang Boey Lim
- Dokyung Lim
- Kihong Kim (ORCID: https://orcid.org/0000-0001-9965-3535)
- Dong Bee Jang
- Hyo-Gyuem Rhew
- D. Noh
- Michael Choi (ORCID: https://orcid.org/0009-0005-1210-3466)
- S.-M. Yim
- Hyungdong Roh
Institutions
- Samsung (South Korea) (KR)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/vlsitechnologyandcir65189.2025.11074881
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00