Extending the Gate-All-Around (GAA) Era to the A10 Node: Outer Wall Forksheet Enabling Full Channel Strain and Superior Gate Control

Outer wall forksheet device architecture enables further scaling of gate-all-around (GAA) technologies, while maintaining full channel control through Omega-gate, and full <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{s} / \mathrm{d}$</tex> stress efficacy. The presented wall-last approach allows for a continuous crystal template during epi growth, enabling full channel stress. Furthermore, the wider wall reduces process complexity and enables omega gate through wall etch back, effectively creating a GAA channel, increasing electrostatic control, and boosting on-current by 27 % compared to tri-gate forksheet architecture.