First Demonstration of Fluorine-Treated IGZO FETs with Record-Low Positive Bias Temperature Instability $\left(\left\vert \Delta V_{\text{TH}}\right\vert<44 \text{mV}\right)$ at an Elevated Temperature (395 K)

We present here the reliability enhancement of BEOL-compatible ITO-enhanced fluorine-treated IGZO transistors (IGZO:F FETs). The IGZO FETs exhibit a record-low <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\left\vert \Delta V_{\text{TH}}\right\vert$</tex> of 43.7 mV at an elevated temperature of 395 K under a high oxide electric field (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$E_{\text{OX}}$</tex>) of 4 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{MV} / \text{cm}$</tex> for 1 ks, while maintaining excellent electrical performance. For the first time, we propose an atomic-level mechanism that explains how fluorine doping modulates migration barrier and path of hydrogen <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{H})$</tex> that contributes to enhanced reliability in oxide FETs.

Authors

Xiao Gong (ORCID: https://orcid.org/0000-0002-9243-1937)
Zihang Fang (ORCID: https://orcid.org/0009-0005-5576-0853)
Xuanqi Chen (ORCID: https://orcid.org/0009-0002-8620-5041)
Evgeny Zamburg (ORCID: https://orcid.org/0000-0002-4672-2813)
Aaron Thean (ORCID: https://orcid.org/0000-0003-2418-6404)
Quanzhen Wan (ORCID: https://orcid.org/0000-0002-6111-2140)
Sonu Hooda
Zhi Gen Yu (ORCID: https://orcid.org/0000-0002-3718-6027)
Renzhuo Wan (ORCID: https://orcid.org/0000-0003-2649-4515)
Maheswari Sivan (ORCID: https://orcid.org/0000-0002-1344-292X)
Baoshan Tang (ORCID: https://orcid.org/0000-0001-6768-3203)
Wenhui Wang (ORCID: https://orcid.org/0000-0002-5884-6098)
Yong‐Wei Zhang (ORCID: https://orcid.org/0000-0001-7255-1678)

Institutions

Agency for Science, Technology and Research (SG)
National University of Singapore (SG)
Institute of High Performance Computing (SG)

Publication Details

Published: 2025-06-08
DOI: https://doi.org/10.23919/vlsitechnologyandcir65189.2025.11075017
Primary Topic: Advancements in Semiconductor Devices and Circuit Design
Type: article
Field-Weighted Citation Impact: 0.00

First Demonstration of Fluorine-Treated IGZO FETs with Record-Low Positive Bias Temperature Instability $\left(\left\vert \Delta V_{\text{TH}}\right\vert<44 \text{mV}\right)$ at an Elevated Temperature (395 K)

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Publication Details

First Demonstration of Fluorine-Treated IGZO FETs with Record-Low Positive Bias Temperature Instability $\left(\left\vert \Delta V_{\text{TH}}\right\vert<44 \text{mV}\right)$ at an Elevated Temperature (395 K)

First Demonstration of Fluorine-Treated IGZO FETs with Record-Low Positive Bias Temperature Instability $\left(\left\vert \Delta V_{\text{TH}}\right\vert<44 \text{mV}\right)$ at an Elevated Temperature (395 K)

Abstract

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First Demonstration of Fluorine-Treated IGZO FETs with Record-Low Positive Bias Temperature Instability $\left(\left\vert \Delta V_{\text{TH}}\right\vert&lt;44 \text{mV}\right)$ at an Elevated Temperature (395 K)

Authors

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Publication Details

First Demonstration of Fluorine-Treated IGZO FETs with Record-Low Positive Bias Temperature Instability $\left(\left\vert \Delta V_{\text{TH}}\right\vert<44 \text{mV}\right)$ at an Elevated Temperature (395 K)

First Demonstration of Fluorine-Treated IGZO FETs with Record-Low Positive Bias Temperature Instability $\left(\left\vert \Delta V_{\text{TH}}\right\vert<44 \text{mV}\right)$ at an Elevated Temperature (395 K)

Abstract

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First Demonstration of Fluorine-Treated IGZO FETs with Record-Low Positive Bias Temperature Instability $\left(\left\vert \Delta V_{\text{TH}}\right\vert<44 \text{mV}\right)$ at an Elevated Temperature (395 K)