Homo-Channel WSe₂ n/pFETs with High Performance and On/Off Ratio Using Tunable Doping

Achieving symmetric <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{n} / \text{pFETs}$</tex> with high current densities and matched threshold voltages in a single 2D channel material is crucial for homo-channel CMOS integration and the realization of 3D monolithic applications. This work introduces novel n-doping using aluminum nitride (AlN) and p -doping using molybdenum oxide (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{MoO}_{\mathrm{x}}$</tex>) on CVD-grown monolayer tungsten diselenide (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1 ~\mathrm{L}-\text{WSe}_{2}$</tex>), achieving record-high electron current (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\sim 230 \mu ~\mathrm{A} / \mu \mathrm{m}$</tex> at <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}_{\text{DS}}=1 ~\mathrm{V}$</tex>) with lowest contact resistance (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\sim 1 \mathrm{k} \Omega \cdot \mu \mathrm{m}$</tex>) and one of the best reported hole currents (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$&gt;400 \mu ~\mathrm{A} / \mu \mathrm{m}$</tex> at <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}_{\text{DS}}=-1 ~\mathrm{V}$</tex>), both in enhancement mode. AlN/MoO <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">${ }_{x}$</tex> doping enables tunable doping strength with on/off ratio (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$&gt;10^{6}$</tex>) and well-matched <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}_{\text{TH}}$</tex> for n - and pFETs. This work demonstrates high gain (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$&gt;25 ~\mathrm{V} / \mathrm{V}$</tex> at <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}_{\text{DD}}=1.5 ~\mathrm{V}$</tex>) and the potential of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{WSe}_{2}$</tex> for mono-channel CMOS technology.