1T1C 3D HZO FeRAM with High Retention (>125 °C) and High Endurance (>1E13) for Embedded Nonvolatile Memory Application

We present a high-performance 3D FeRAM test chip with hafnium zirconium oxide (HZO) materials for advanced embedded nonvolatile memory (eNVM) applications. This FeRAM achieves array-level endurance exceeding > 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">13</sup> cycles, robust data retention over 10 years at 125°C, and stable high-temperature operation. A novel stack design with defect shielding layers (DSL) on both sides of the HZO film effectively suppresses fatigue, imprint, and pinch phenomena, which are common challenges in ferroelectric memories. A 32Mb 1T1C FeRAM test chip was developed by integrating the high-performance ferroelectric capacitor (FeCAP) with a 7-nm HZO film into a 3D trench structure on a 40nm CMOS platform. The memory array demonstrates a memory window of approximately 340 mV at -5.2σ(0.1ppm), maintaining above 200 mV after 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> writes/10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">13</sup> reads, and 125°C baking operation. These results highlight the significant potential of this eFeRAM to replace eFlash in industrial-level eNVM applications, offering enhanced performance and reliability.