First Implementation of Monolithic Integrated Cim with 1Mb Ultra-High-Density 8-Layer 3D VRRAM, Achieving High Computing Density ($204.8 \text{GOPs} / \text{mm}^{2}$) and FoM ($\mathbf{2. 1 3} \times \mathbf{1 0}^{\mathbf{6}} \text{GOPS}^{\mathbf{2}}
This work firstly implemented the Monolithic Integration of ultra-high density 1 Mb 8-layer 3D Vertical RRAM based Computing-In-Memory chip (MI-3DCIM) for efficient scientific computing. The 3D VRRAM performs in-situ matrix-vector multiplication (MVM) and transmits data to underlying computational circuits via the BEOL metal interconnects, which is embedded with the on-chip processor, enabling a fully monolithic SoC. Benefiting from the reduced latency and energy consumption, the MI-3DCIM exhibits ultra-high computational density (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$204.8 \text{GOPS} / \text{mm}^{2}$</tex>), high energy efficiency (10.4 TOPS/W) and superior Figure of Merit (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$2.13 \times 10^{6} \text{GOPS}^{2} / \mathrm{W} / \text{mm}^{2}$</tex>). This novel 3DCIM chip greatly enhances the capability for complex tasks.
Authors
- Yu Liu (ORCID: https://orcid.org/0000-0002-7694-2454)
- Xiaoxin Xu (ORCID: https://orcid.org/0000-0002-0277-1314)
- Shuaidi Zhang (ORCID: https://orcid.org/0009-0003-9152-612X)
- Zhen Fan (ORCID: https://orcid.org/0000-0003-4199-0082)
- Peiwen Zhang
- Feng Zhang (ORCID: https://orcid.org/0000-0002-1163-2498)
- Cailian Ma
- Kaiping Zhang
- Shengjie Zhao (ORCID: https://orcid.org/0000-0002-1908-1133)
- Yue Wu (ORCID: https://orcid.org/0000-0001-7910-4002)
- Long Nie
- Weiye Tang (ORCID: https://orcid.org/0009-0007-2696-5117)
- Wenxuan Sun (ORCID: https://orcid.org/0000-0002-9723-4844)
- Yao Li (ORCID: https://orcid.org/0000-0002-4523-8368)
- Ming Liu (ORCID: https://orcid.org/0009-0006-4862-8333)
Institutions
- Beijing Institute of Technology (CN)
- Chinese Academy of Sciences (CN)
- Institute of Microelectronics (CN)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/vlsitechnologyandcir65189.2025.11075209
- Citations
- 1
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.73
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China