High-Density Wafer Level Connectivity Using Frontside Hybrid Bonding at 250nm Pitch and Backside Through-Dielectric Vias at 120nm Pitch After Extreme Wafer Thinning
This study presents the latest advancements in high-density wafer-level connectivity. We achieve face-to-face hybrid bonding at 250nm pitch. Access from the wafer backside is demonstrated through extreme wafer thinning beyond the shallow trench isolation floor and through dielectric via connections at 120nm pitch. Additionally, we examine the impact of guided wafer to wafer bonding, necessary for tight pitch hybrid bonding, on subsequent backside lithography overlay corrections, paving the way for combining high-density wafer front and backside connectivity.
Authors
- C. Zhu
- Jan Willem Maes
- Koen D’havé
- Stefaan Van Huylenbroeck
- Serena Iacovo
- Michele Stucchi (ORCID: https://orcid.org/0000-0002-7848-0492)
- Sarah Dewilde (ORCID: https://orcid.org/0000-0002-7315-3230)
- K. Vandersmissen (ORCID: https://orcid.org/0009-0008-7831-564X)
- D. Montero (ORCID: https://orcid.org/0000-0001-9966-0399)
- Eric Beyne (ORCID: https://orcid.org/0000-0002-3096-050X)
- Baowei Zhang (ORCID: https://orcid.org/0000-0003-4289-4754)
- Rami Chukka
- Liesbeth Witters (ORCID: https://orcid.org/0000-0002-0772-5501)
- N. Heylen (ORCID: https://orcid.org/0009-0008-0490-0993)
- S-A. Chew
- Peng Zhao (ORCID: https://orcid.org/0000-0002-4850-9354)
- N. Jourdan
- H. Bana
- San Chun Kang (ORCID: https://orcid.org/0009-0008-5152-7976)
- Joeri De Vos
- Gerald Beyer (ORCID: https://orcid.org/0009-0009-6367-3046)
Institutions
- IMEC (BE)
- ASM International (Belgium) (BE)
- ASM International (Finland) (FI)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/vlsitechnologyandcir65189.2025.11075104
- Citations
- 1
- Primary Topic
- 3D IC and TSV technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.73