A 37.8Mb/mm<sup>2</sup> Sram in Intel 18A Technology Featuring a Resistive Supply-Line Write Scheme and Write-Assist with Parallel Boost Injection

A high-density, SRAM-based Register File (RF) has been demonstrated in Intel 18A Technology [1] featuring RibbonFET GAA transistors and a Back Side Power Delivery Network (BSDPN). The RF is optimized for high density and array efficiency and achieves a density of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$37.8 \text{Mb} / \text{mm}^{2}$</tex>, the highest density reported to date for an RF. It is implemented with a conventional Bitline (BL), two-bank memory architecture and it can be used as the SRAM workhorse for most SoC applications with maximum bit-count of 262 Kb.

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Published
2025-06-08
DOI
https://doi.org/10.23919/vlsitechnologyandcir65189.2025.11074884
Citations
1
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.73
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article

A 37.8Mb/mm2 Sram in Intel 18A Technology Featuring a Resistive Supply-Line Write Scheme and Write-Assist with Parallel Boost Injection

K. Chawla, J. Prasanth Kumar, Harold Pilo, Manish Arora et al.
1 citations
Semiconductor materials and devices
0.73
article

A 37.8Mb/mm2 Sram in Intel 18A Technology Featuring a Resistive Supply-Line Write Scheme and Write-Assist with Parallel Boost Injection

K. Chawla, J. Prasanth Kumar, Harold Pilo, Manish Arora, Jianjun Jia, Anurag Garg, Chien-An Lai, Zack Lo
article en
1 citations

Abstract

A high-density, SRAM-based Register File (RF) has been demonstrated in Intel 18A Technology [1] featuring RibbonFET GAA transistors and a Back Side Power Delivery Network (BSDPN). The RF is optimized for high density and array efficiency and achieves a density of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$37.8 \text{Mb} / \text{mm}^{2}$</tex>, the highest density reported to date for an RF. It is implemented with a conventional Bitline (BL), two-bank memory architecture and it can be used as the SRAM workhorse for most SoC applications with maximum bit-count of 262 Kb.

Synopsys (Switzerland) (CH), Synopsys (United States) (US)
Affordable and clean energy
Openalex Percentile: Top 25%
Semiconductor materials and devices
0.73
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A 37.8Mb/mm<sup>2</sup> Sram in Intel 18A Technology Featuring a Resistive Supply-Line Write Scheme and Write-Assist with Parallel Boost Injection — K. Chawla, J. Prasanth Kumar, et al. · (2025) | TGRS Research Map | TGRS