Heterogeneous Integration of InGaAs PIN and APD Photodetectors for High-Speed Interconnects
This work presents heterogeneously integrated high-speed InGaAs PINs and APDs for shortwave wavelength division multiplexing optical interconnects. PIN photodiodes demonstrate low dark current and high external quantum efficiency, while APDs exhibit stable avalanche gain. The approach enables cost-effective, wafer-scale manufacturing with CMOS compatibility.
Authors
- Bei Shi (ORCID: https://orcid.org/0000-0003-3453-2358)
- Jonathan Klamkin (ORCID: https://orcid.org/0000-0001-9911-6879)
- Simone Šuran Brunelli (ORCID: https://orcid.org/0000-0003-4324-1763)
- Matthew Dummer (ORCID: https://orcid.org/0000-0003-2446-6377)
- Hongwei Zhao (ORCID: https://orcid.org/0000-0002-7623-9558)
- Michael McGiveny
Institutions
- Goleta Engineering (United States) (US)
Publication Details
- Published
- 2025-06-16
- DOI
- https://doi.org/10.1109/oip65843.2025.11081690
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00