3-KV GaN Smart Power Integration Platform for High-Power-Density Conversion Systems Using Charge-Balanced Superjunction Technology

This work reports a 3-kV smart GaN power integration platform on sapphire substrate based on charge-balanced superjunction (SJ) technology. The platform provides a variety of low-voltage (LV) components for controlling/driving circuitry, including resistors, capacitor, LV enhancementmode HEMT (LV E-HEMT), depletion-mode transistor (LV D-HEMT), LV-rectifier. For high-voltage (HV) power loop circuitry, the platform provides 3-kV E-mode surperjunction HEMT (HV SJ-HEMT) and superjunction rectifier (HV SJrectifier). The proposed SJ structure leads to a 1.6 times enhancement in breakdown voltage (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$B V$</tex>) and a lower specific ON-resistance (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$R_{\text{SP}}$</tex>). The <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$3-\text{kV}$</tex> HV devices present a <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$B V&gt;6.5$</tex> kV, leaving a large operation margin. The figure of merit (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{FOM}=B V^{2} / R_{\text{SP}}$</tex>) of HV devices is among the best in literature.