Scalable Fabrication and Demonstration of the First Fully Integrated 14nm 2-Stack SOM (Selector Only Memory) Device
This study successfully demonstrates the fabrication and operation of the first fully integrated 14nm 2-stack SOM (Selector Only Memory) devices with a 1-Gb main cell array. A read window over 750mV is achieved across all decks and all cell characteristics are maintained up to the 14nm node with the advanced processes, providing the scalability of SOM device. Furthermore, comprehensive reliability evaluations is conducted, confirming the feasibility of the mass production.
Authors
- Kwang‐Il Park (ORCID: https://orcid.org/0000-0002-0199-8090)
- Sung Ho Eun
- K. D. Park
- Kyung-Woo Lee (ORCID: https://orcid.org/0000-0002-3533-7979)
- Y. J. Park
- S. C. Oh (ORCID: https://orcid.org/0009-0006-8082-641X)
- Youjian Song (ORCID: https://orcid.org/0000-0002-5182-8620)
- Seng Hua Lee (ORCID: https://orcid.org/0000-0001-6369-9902)
- Jeehwan Song (ORCID: https://orcid.org/0000-0001-5532-5089)
- S. J. Ahn
- Il Memming Park (ORCID: https://orcid.org/0000-0002-4255-7750)
- Hyung Chul Yoon (ORCID: https://orcid.org/0000-0002-5607-7838)
- Sunjin Song
- S. K. Kim
- Won Ho Park (ORCID: https://orcid.org/0000-0003-1768-830X)
- Sang‐Won Park (ORCID: https://orcid.org/0000-0002-0550-1897)
- J.H. Park (ORCID: https://orcid.org/0000-0002-1022-5196)
- Zhongyuan Wu (ORCID: https://orcid.org/0000-0002-8034-0210)
- Sangjin Hyun
- C. H. Lee
Institutions
- Samsung (South Korea) (KR)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/vlsitechnologyandcir65189.2025.11075063
- Citations
- 1
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.73