Designing Robust Interfaces of HZO Module (>10<sup>12</sup> at 85 °C) with High Sensing Margin (>300 mV) for ≤1.1 V 1T-1F with Common Plate Line and 1T-nF FeRAM

Energy-efficient AI will be realized in conjunction with ferroelectric nT-mF in the near future. First, we present a ferroelectric module solution that is equipped with Pr-boosted HZO (2Pr <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$54\ \mu \mathrm{C}/\text{cm}^{2}$</tex>) and universally improved ILs for FE, MPB and AFE. The films show high write/read endurance cycles (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$> 10^{12}$</tex> at 85 °C). Second, we implement the solution into 1T-1F with a common plate line and 1T-nF FeRAM. We confirm sufficiently high sensing margins (≥300 mV).

Authors

Yeahan Sur (ORCID: https://orcid.org/0000-0003-0919-7412)
Daewon Ha (ORCID: https://orcid.org/0000-0002-9061-8626)
Kilho Lee
Jaihyuk Song
Seon Yong Kim (ORCID: https://orcid.org/0000-0002-1532-7976)
Youngin Goh (ORCID: https://orcid.org/0000-0002-7995-6640)
Wanki Kim
Hanjin Lim (ORCID: https://orcid.org/0000-0003-4171-6622)
Daewoong Kwon (ORCID: https://orcid.org/0000-0003-1159-3406)
Sehyoung Ahn
Jayun Choi
Intak Jeon (ORCID: https://orcid.org/0000-0002-4116-4517)
Seung Hun Lee
Sung Wook Park (ORCID: https://orcid.org/0000-0001-6699-8553)
Chang Hwa Jung
Jongwook Jeon
Yongbin Lee (ORCID: https://orcid.org/0009-0005-5284-3004)
Hye Young Kwon
Su Jin Ahn
Jin Soak Kim
Sangjin Hyun
E. S. Chung
Yaejin Hong

Institutions

Samsung (South Korea) (KR)
Hanyang University (KR)
Sungkyunkwan University (KR)

Publication Details

Published: 2025-06-08
DOI: https://doi.org/10.23919/vlsitechnologyandcir65189.2025.11075096
Primary Topic: Ferroelectric and Negative Capacitance Devices
Type: article
Field-Weighted Citation Impact: 0.00

Designing Robust Interfaces of HZO Module (>10¹² at 85 °C) with High Sensing Margin (>300 mV) for ≤1.1 V 1T-1F with Common Plate Line and 1T-nF FeRAM

Yeahan Sur, Daewon Ha, Kilho Lee, Jaihyuk Song, Seon Yong Kim, Youngin Goh, Wanki Kim, Hanjin Lim, Daewoong Kwon, Sehyoung Ahn, Jayun Choi, Intak Jeon, Seung Hun Lee, Sung Wook Park, Chang Hwa Jung, Jongwook Jeon, Yongbin Lee, Hye Young Kwon, Su Jin Ahn, Jin Soak Kim, Sangjin Hyun, E. S. Chung, Yaejin Hong

June 8, 2025article en

Designing Robust Interfaces of HZO Module (>10<sup>12</sup> at 85 °C) with High Sensing Margin (>300 mV) for ≤1.1 V 1T-1F with Common Plate Line and 1T-nF FeRAM

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Institutions

Publication Details

Designing Robust Interfaces of HZO Module (>10¹² at 85 °C) with High Sensing Margin (>300 mV) for ≤1.1 V 1T-1F with Common Plate Line and 1T-nF FeRAM

Designing Robust Interfaces of HZO Module (>10¹² at 85 °C) with High Sensing Margin (>300 mV) for ≤1.1 V 1T-1F with Common Plate Line and 1T-nF FeRAM

Abstract

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Designing Robust Interfaces of HZO Module (&gt;10<sup>12</sup> at 85 °C) with High Sensing Margin (&gt;300 mV) for ≤1.1 V 1T-1F with Common Plate Line and 1T-nF FeRAM

Authors

Institutions

Publication Details

Designing Robust Interfaces of HZO Module (>1012 at 85 °C) with High Sensing Margin (>300 mV) for ≤1.1 V 1T-1F with Common Plate Line and 1T-nF FeRAM

Designing Robust Interfaces of HZO Module (>1012 at 85 °C) with High Sensing Margin (>300 mV) for ≤1.1 V 1T-1F with Common Plate Line and 1T-nF FeRAM

Abstract

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Designing Robust Interfaces of HZO Module (>10<sup>12</sup> at 85 °C) with High Sensing Margin (>300 mV) for ≤1.1 V 1T-1F with Common Plate Line and 1T-nF FeRAM

Designing Robust Interfaces of HZO Module (>10¹² at 85 °C) with High Sensing Margin (>300 mV) for ≤1.1 V 1T-1F with Common Plate Line and 1T-nF FeRAM

Designing Robust Interfaces of HZO Module (>10¹² at 85 °C) with High Sensing Margin (>300 mV) for ≤1.1 V 1T-1F with Common Plate Line and 1T-nF FeRAM