Design of Energy Efficient Mobility Enhanced Double Layered Channel Strained-Si/SiGe FDSOI MOSFET

A dual-layered channel Strained-Si/SiGe FDSOI MOSFET with Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> as the BOX layer (W<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CH</inf>=15nm) and HfO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> as the gate oxide (W<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CH</inf>=1.8nm) is investigated with a thin SiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> layer (W<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CH</inf>=4Å) beneath the HfO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> layer. This novel setup uses silicon-germanium and strained silicon channels to boost electron mobility for high-speed performance. Using gallium oxide Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> in the BOX layer improves electrical isolation and minimizes leakage currents, resulting in decreased power usage. The broad bandgap of Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> also facilitates enhanced breakdown voltage enabling reliable operation even at reduced device dimensions. Adding hafnium oxide HfO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> as the gate oxide produces a high dielectric constant (high-k), which inhibits short-channel effects and permits effective gate control, lowering static power consumption while preserving fast switching rates.