High Density 7nm FinFET Dielectric RRAM in Embedded Memory Applications

A high density FinFET Dielectric RRAM (FIND RRAM) is firstly developed in fully compatible 7nm FinFET CMOS logic process without additional masks or process steps. The high density embedded 7nm FIND RRAM cell has a unit cell area of 0.063um<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, which consists of a 7nm nFinFET (WL) in series of a tiny high-K gate dielectric resistive switch node. The 7nm embedded HfO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>-based FIND RRAM performs very excellent metrics in high-speed operation, stable readout window, and superior reliability in endurance and retention. Besides, the NOR-type array arrangement has superior disturb window and overwriting immunity for various embedded IP configurations. Moreover, the highly scalable embedded FIND RRAM cell can be further adapted to 5nm and beyond for boosting the memory density, performance, and operation voltages, which all lead the 7nm FinFET RRAM technology to be a promising FinFET memory solution in advanced embedded applications.