A $22 \mu \mathrm{g} /\sqrt{} \text{Hz}$ Noise Floor, $1.6 \text{mg} /\mathrm{g}^{2}$ VRC, High Efficiency MEMS Capacitive Accelerometer Using High-Voltage Orthogonal Excitation Technique

This work presents a high-voltage orthogonal excitation (HVOE) based readout circuit for MEMS capacitive accelerometer. The proposed interface IC is fabricated in <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.18 \mu \mathrm{m}$</tex> BCD process, achieving a low noise floor of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$22 \mu \mathrm{g} / \sqrt{} \text{Hz}$</tex> with low vibration rectification error (VRE) evaluated by vibration rectification coefficient (VRC) <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\left(1.6 \text{mg} / \mathrm{g}^{2}\right)$</tex> and high efficiency evaluated by FoM (4.58pJ). Compared to state-of-the-art low noise MEMS accelerometers, this work improves the VRC and the FoM by 40x and 11.6x, respectively.