High-Performance Monolithic 3D Integrated Red μLEDoS Display for AR/VR

The monolithic 3D (M3D) integration of Si CMOS integrated circuits (IC) and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mu \text{LEDs}$</tex> is essential for high-resolution AR/VR displays. In this work, we successfully demonstrated a red <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mu \text{LEDoS}$</tex> display of 1700 PPI and a <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$640 \times 480$</tex> resolution based on the M3D process. The phosphide red <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mu \text{LED}$</tex> devices exhibited excellent color performance as unit pixels. Notably, with high pixel yield achieved through a low-temperature process below 300° C and a metal mesh structure mitigating IR drop issues, we successfully implemented high-quality imaging driven by real-time HDMI inputs using 8-bit grayscale. This study plays an essential role in advancing M3D <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mu \text{LEDoS}$</tex> next-generation display.