Optimization of a 3.5 μm Pitch 3D-Stacked Back-Illuminated SPAD in 40 nm CIS Technology: Achieving 37% PDP at 940 nm
We report on a 3.5 μm pitch 3D-stacked back-illuminated single-photon avalanche diode (SPAD) based on 40 nm CIS technology. The SPAD is optimized to achieve superior photon detection probability (PDP) through doping optimization, enabling it to reach a PDP of 37% at 940 nm.
Authors
- Joo‐Hyun Kim (ORCID: https://orcid.org/0000-0001-8415-547X)
- Hyun-Seung Choi
- Myung-Jae Lee (ORCID: https://orcid.org/0000-0003-0475-1437)
- Kyungdo Kim (ORCID: https://orcid.org/0000-0001-7194-2984)
- Jongchae Kim
- Jae‐Hyung Jang (ORCID: https://orcid.org/0000-0001-9633-5574)
- Hyo-Sung Park
- Doo-Hee Son
- Eunkyoung Kim
- Hanseung Lee (ORCID: https://orcid.org/0000-0002-3233-502X)
- Eunsung Park (ORCID: https://orcid.org/0009-0008-0861-8813)
- Woo-Young Choi
- Doyoon Eom
- Seyoung Yook
Institutions
- SK Group (United States) (US)
- SK Group (South Korea) (KR)
- Yonsei University (KR)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/vlsitechnologyandcir65189.2025.11075016
- Citations
- 2
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 1.46