Differences in Operational Mechanisms of As- and Sb-Based Selector Only Memory for Emerging 3DXP Architecture

Selector Only Memory (SOM) exhibits unique polaritydependent <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}_{\text {th }}$</tex> shift characteristics, but their origins are still unclear. In this study, we investigated the operation mechanisms of group 15 elements, such as As and Sb, which contribute to the amorphous stability. For this purpose, GeAsSeIn and GeSbSeIn SOM devices were fabricated on 12-inch wafer. The I-V analysis confirmed distinct conduction mechanisms between the materials, and Sb-related trap states result in a larger memory window (2.1V) and low <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}_{\text {th }}$</tex> drift (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$4 \text{mV} / \text{dec}$</tex>) compared to As-based SOM devices. TEM analysis revealed the local atomic distribution, showing high RDE properties (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$&gt;60 \mathrm{G}$</tex>) for both As and Sb-based SOM devices, despite Sb migration during the initial cycle. Also, photonic IV based trap profile measurement and DFT calculations were performed to identify the origin of the trap states. These results demonstrate that SOM exhibits diverse operational mechanisms, emphasizing the need for fundamental analysis for each material.