A Gate-All-Around Nanosheet Oxide Semiconductor Transistor by Selective Crystallization of InGaOx for Performance and Reliability Enhancement
We have demonstrated performance enhancement of polycrystalline InOx FET by Ga-doping in ALD process & anneal with mobility of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$81 ~\text{cm}^{2}/\text{Vs}$</tex>, novel selective crystallization technique for the InGaOx in an oxide semiconductor (OS) stack, and process integration & device operation of a gate-allaround nanosheet (GAA NS) InGaOx (IGO) FET, for the first time. An evidence of quantum confinement in NS OS is experimentally obtained. Bias-stress reliability is significantly improved by GAA NS FET. This work will provide a direction for high-performance OS FETs toward LSI applications.
Authors
- Xingyu Huang
- Kota Sakai
- Yukiharu Uraoka (ORCID: https://orcid.org/0000-0002-1319-3599)
- Sunbin Hwang (ORCID: https://orcid.org/0000-0002-1411-7117)
- Takuya Saraya (ORCID: https://orcid.org/0000-0002-3796-7747)
- Anlan Chen (ORCID: https://orcid.org/0000-0002-0044-4328)
- Mutsunori Uenuma (ORCID: https://orcid.org/0000-0002-3387-6805)
- Kihoon Park (ORCID: https://orcid.org/0000-0002-6804-7134)
- Masaharu Kobayashi (ORCID: https://orcid.org/0000-0002-7945-6136)
- Toshiro Hiramoto (ORCID: https://orcid.org/0000-0001-9469-2631)
- Takanori Takahashi (ORCID: https://orcid.org/0000-0001-8511-4194)
Institutions
- National Institute of Advanced Industrial Science and Technology (JP)
- The University of Tokyo (JP)
- Nara Institute of Science and Technology (JP)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/vlsitechnologyandcir65189.2025.11074932
- Citations
- 3
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 2.19