A Heterogeneous CMOS Chip Monolithically Integrating Monolayer MoS₂ for Enhanced NUV Detection: A Scalable Platform Leveraging 2D Materials to Complement and Surpass Silicon

A gap persists between the remarkable properties of 2D materials and their realization in chips, demanding integration strategies that unlock 2D-CMOS complementarity to surpass silicon. We present a 2D-CMOS heterogeneous chip and this approach demonstrates a paradigm that combines the properties of 2D materials with the established advantages of CMOS as a large-scale chip foundation. Our chip seamlessly integrates the intrinsic properties of monolayer <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{MoS}_{2}$</tex>, particularly high-gain and low-noise, enabling superior nearultraviolet performance over mainstream silicon-based chips. This integration complements and transcends the limitations of silicon chips. Our chip achieves a 257 % quantum efficiency at 375 nm and a detectivity (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{D}^{\ast}$</tex>) exceeding 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">13</sup> Jones under weak illumination, maintaining an effective signal-to-noise ratio (SNR) of 3 dB at 0.4 pW ultra-low light intensity. Compared to state-of-the-art 2D-materials integration, our design reduces fabrication complexity, enhances scalability, and achieves a high degree of CMOS integration, yielding substantial performance improvements. These results establish a scalable integration platform, bridging the gap between emerging materials and practical chip implementations.