Demonstration of Embedded MRAM with Sub-50 nm MTJ for RAM-Like and MCU Applications
We present the scalability of the MTJ critical dimension (CD) to sub-50 nm on test vehicles at the 16 nm technology node. Using fast-write MTJ films, we demonstrate a high endurance of lE14 cycles with a high-speed 20 ns write pulse width and a sub-ppm bit error rate without ECC for RAM-like applications. With high data retention MTJ films, we achieve 20-year data retention above 150°C and lE6 cycles endurance for MCU applications. This MTJ CD scaling is designed to be compatible with small bitcell, making it suitable for the 5 nm technology node.
Authors
- Kuo‐Ching Tseng (ORCID: https://orcid.org/0000-0003-2069-9915)
- Meng-Ru Jiang
- Ming‐Han Tsai (ORCID: https://orcid.org/0000-0001-5563-3057)
- Bo-Hung Lin
- Ruo‐Qian Wang (ORCID: https://orcid.org/0000-0003-2052-8948)
- Brian Lin (ORCID: https://orcid.org/0000-0002-8851-3534)
- Eric Chien
- Perng-Fei Yuh
- Wei-Xiang You (ORCID: https://orcid.org/0000-0002-4001-1084)
- C.C. Liu
- Butsurin Jinnai (ORCID: https://orcid.org/0000-0001-8759-1226)
- Kevin Huang (ORCID: https://orcid.org/0000-0003-2718-2214)
- Tien-Wei Chiang
- Yuxiao Wang (ORCID: https://orcid.org/0009-0004-9454-5972)
- Yuan-Jen Lee
- Andrew Wang (ORCID: https://orcid.org/0000-0002-1151-5961)
- Yu-Sheng Chen (ORCID: https://orcid.org/0000-0002-9293-5713)
- Yi-Chun Shih (ORCID: https://orcid.org/0000-0003-1511-2366)
- Chun-Yang Tsai (ORCID: https://orcid.org/0000-0002-5843-0164)
- Jiancheng Huang (ORCID: https://orcid.org/0000-0002-7713-5021)
- Harry Chuang
- Chun-Tai Cheng
- Ku-Feng Lin
- Ming-Lun Lee
- Kuo-Feng Huang
- Yi Ching Ong
Institutions
- Taiwan Semiconductor Manufacturing Company (Taiwan) (TW)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/vlsitechnologyandcir65189.2025.11075129
- Citations
- 1
- Primary Topic
- Parallel Computing and Optimization Techniques
- Type
- article
- Field-Weighted Citation Impact
- 2.27