Design of a 165-178 GHz 4-way Power Combined Amplifier with output Power Greater than 18.8 dBm

The Terahertz (THz) spectrum is the next frontier for efficient imaging applications and high-bandwidth wireless communication.A high-powered signal is imperative for the improvement of image resolution.The SiGe HBTs (heterojunction bipolar transistors) low output power level is one of the fundamental difficulties in the development of systems at high frequency and hence the importance of amplification at THz frequency range.This research is about designing, modeling, and simulating a 3-stage, 4-way power combined solid state PA (SSPA).The 3stage design performance was optimized using a transmission line whose values were chosen optimally to ensure low loss.A single unit of the SSPA contains three stages and by using a splitter and combiner, 4 units of the SSPA were combined to give the desired output power.Simulations were performed using ADS Keysight and a gain of 30dB, saturation power out of 18.847dBm, and PAE (PAE) of 5.7% was achieved.This is a 28.8% increase in gain, an 11.36% increase in PAE, and a 3.3 % increase in saturation power compared to state-of-the-art results.

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Publication Details

Journal
International Journal of Engineering and Manufacturing
Published
2025-08-05
DOI
https://doi.org/10.5815/ijem.2025.04.01
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
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article

Design of a 165-178 GHz 4-way Power Combined Amplifier with output Power Greater than 18.8 dBm

Oluseun Oyeleke, Olabode Idowu-Bismark, Oluwadamilola Oshin, D. Ali et al.
International Journal of Engineering and Manufacturing
Radio Frequency Integrated Circuit Design
article

Design of a 165-178 GHz 4-way Power Combined Amplifier with output Power Greater than 18.8 dBm

Oluseun Oyeleke, Olabode Idowu-Bismark, Oluwadamilola Oshin, D. Ali, Adedoyin David Afolabi
article en

Abstract

The Terahertz (THz) spectrum is the next frontier for efficient imaging applications and high-bandwidth wireless communication.A high-powered signal is imperative for the improvement of image resolution.The SiGe HBTs (heterojunction bipolar transistors) low output power level is one of the fundamental difficulties in the development of systems at high frequency and hence the importance of amplification at THz frequency range.This research is about designing, modeling, and simulating a 3-stage, 4-way power combined solid state PA (SSPA).The 3stage design performance was optimized using a transmission line whose values were chosen optimally to ensure low loss.A single unit of the SSPA contains three stages and by using a splitter and combiner, 4 units of the SSPA were combined to give the desired output power.Simulations were performed using ADS Keysight and a gain of 30dB, saturation power out of 18.847dBm, and PAE (PAE) of 5.7% was achieved.This is a 28.8% increase in gain, an 11.36% increase in PAE, and a 3.3 % increase in saturation power compared to state-of-the-art results.

International Journal of Engineering and ManufacturingVol. 15(4)
Affordable and clean energy
Openalex Percentile: Top 82%
Radio Frequency Integrated Circuit Design
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Design of a 165-178 GHz 4-way Power Combined Amplifier with output Power Greater than 18.8 dBm — Oluseun Oyeleke, Olabode Idowu-Bismark, et al. · International Journal of Engineering and Manufacturing (2025) | TGRS Research Map | TGRS