Development and Testing of High-Speed ISCM Devices Using Cu₂S/n-Si Heterostructure

The development in the big data era has increased the demand towards the advanced electronic devices with efficient sensing, processing and storage capability. This paper presents the fabrication and testing demonstration of integrated sensing and computing memory (ISCM) functionality using Cu<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>S/n-Si heterostructure. To demonstrate ISCM behavior, photosensing, computing and storage measurements were performed using the Cu<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>S/n-Si based device. The fabricated device shows broadband (ultraviolet to near infrared) sensing with ultrafast response speed of 80/79.3 μs. Further, memristive behaviour was verified using the AC and DC stimulus in the presence of dark and broadband illumination conditions. The device offers the bidirectional resistive sweep with program/erase time of 39/43 μs. The demonstrated ISCM devices have the potential to outperform to the next generation computing architecture-based devices.