Using Hybrid Bonding for Stacked Bi-Color Micro-Light-Emitting Diodes
In this work, A vertically stacked bi-color micro-light-emitting diode (Micro-LED) array structure employing Au-Sn hybrid bonding technology is presented in this work. The design integrates blue flip-chip and green vertical Micro-LEDs into a common cathode circuit configuration, achieving an ultra-fine pixel pitch of 5 μm across a 343 × 387 array on a 1.6 cm² substrate. Precise hybrid bonding was performed at 233°C for 30 minutes, enabling effective Au-Sn alloy formation. The structure’s performance was verified through electrical character and cross-sectional SEM-EDX analysis, demonstrating minimal voltage increase post-bonding and confirming the feasibility of independent control for both colors. This integration approach provides a scalable solution for high-resolution, compact, and low power consumption Micro-LEDs display applications, particularly suited for near-eye devices such as augmented and virtual reality systems.
Authors
- Sheng-Po Chang (ORCID: https://orcid.org/0000-0002-4126-0576)
- Jui-Fu Chang
- Wen‐Ching Hung (ORCID: https://orcid.org/0009-0009-8556-6786)
- Shoou‐Jinn Chang (ORCID: https://orcid.org/0000-0002-6912-9377)
Institutions
- National Central University (TW)
- National Kaohsiung University of Science and Technology (TW)
- National Cheng Kung University (TW)
Publication Details
- Journal
- IEEE Transactions on Components Packaging and Manufacturing Technology
- Published
- 2025-08-04
- DOI
- https://doi.org/10.1109/tcpmt.2025.3595581
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00