Using Hybrid Bonding for Stacked Bi-Color Micro-Light-Emitting Diodes

In this work, A vertically stacked bi-color micro-light-emitting diode (Micro-LED) array structure employing Au-Sn hybrid bonding technology is presented in this work. The design integrates blue flip-chip and green vertical Micro-LEDs into a common cathode circuit configuration, achieving an ultra-fine pixel pitch of 5 μm across a 343 × 387 array on a 1.6 cm² substrate. Precise hybrid bonding was performed at 233°C for 30 minutes, enabling effective Au-Sn alloy formation. The structure’s performance was verified through electrical character and cross-sectional SEM-EDX analysis, demonstrating minimal voltage increase post-bonding and confirming the feasibility of independent control for both colors. This integration approach provides a scalable solution for high-resolution, compact, and low power consumption Micro-LEDs display applications, particularly suited for near-eye devices such as augmented and virtual reality systems.

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Publication Details

Journal
IEEE Transactions on Components Packaging and Manufacturing Technology
Published
2025-08-04
DOI
https://doi.org/10.1109/tcpmt.2025.3595581
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
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article

Using Hybrid Bonding for Stacked Bi-Color Micro-Light-Emitting Diodes

Sheng-Po Chang, Jui-Fu Chang, Wen‐Ching Hung, Shoou‐Jinn Chang
IEEE Transactions on Components Packaging and Manufacturing Technology
Semiconductor Lasers and Optical Devices
article

Using Hybrid Bonding for Stacked Bi-Color Micro-Light-Emitting Diodes

Sheng-Po Chang, Jui-Fu Chang, Wen‐Ching Hung, Shoou‐Jinn Chang
article en

Abstract

In this work, A vertically stacked bi-color micro-light-emitting diode (Micro-LED) array structure employing Au-Sn hybrid bonding technology is presented in this work. The design integrates blue flip-chip and green vertical Micro-LEDs into a common cathode circuit configuration, achieving an ultra-fine pixel pitch of 5 μm across a 343 × 387 array on a 1.6 cm² substrate. Precise hybrid bonding was performed at 233°C for 30 minutes, enabling effective Au-Sn alloy formation. The structure’s performance was verified through electrical character and cross-sectional SEM-EDX analysis, demonstrating minimal voltage increase post-bonding and confirming the feasibility of independent control for both colors. This integration approach provides a scalable solution for high-resolution, compact, and low power consumption Micro-LEDs display applications, particularly suited for near-eye devices such as augmented and virtual reality systems.

IEEE Transactions on Components Packaging and Manufacturing TechnologyVol. 15(9)
National Central University (TW), National Kaohsiung University of Science and Technology (TW), National Cheng Kung University (TW)
Affordable and clean energy
Openalex Percentile: Top 82%
Semiconductor Lasers and Optical Devices
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Using Hybrid Bonding for Stacked Bi-Color Micro-Light-Emitting Diodes — Sheng-Po Chang, Jui-Fu Chang, et al. · IEEE Transactions on Components Packaging and Manufacturing Technology (2025) | TGRS Research Map | TGRS