305-GHz Cascode SiGe HBT Power Amplifier With <i>L-C</i> Feedback Achieving <i>P</i> <sub>sat</sub> of 8.3 dBm

A 305-GHz power amplifier (PA) fabricated in a 130-nm SiGe HBT BiCMOS technology with HBT <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$f_{t} / f_{max}$</tex-math></inline-formula> = 350/450 GHz and Aluminum metallization is presented. The PA employs 4-way combined 4 pseudo-differential cascode amplification stages with a capacitive feedback network between the collector of common base stage and the base of common emitter stage that counters the gain degradation by neutralizing the input loss and capacitance of common emitter stage resulting from the device parasitics, transit time related phase delay effects and the interconnect inductances in the layout especially due to the unavoidable interconnect between the output of common-emitter and input of the common-base stage. The PA achieves a measured <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$P_{sat}$</tex-math></inline-formula> of 8.3 dBm, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$OP_{1dB}$</tex-math></inline-formula> of 6 dBm and a peak small signal gain of 14.5 dB at 305 GHz while consuming 880 mW of DC power from a 4-V supply. The PA exhibits the highest <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$P_{sat}$</tex-math></inline-formula>, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$OP_{1dB}$</tex-math></inline-formula> and the highest small signal gain at 305 GHz among the PA's fabricated using SiGe HBT's with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$f_{max}$</tex-math></inline-formula> less than 500 GHz.

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Publication Details

Journal
IEEE Transactions on Terahertz Science and Technology
Published
2025-08-04
DOI
https://doi.org/10.1109/tthz.2025.3595812
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
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article

305-GHz Cascode SiGe HBT Power Amplifier With L-C Feedback Achieving P sat of 8.3 dBm

Kenneth K. O, Haidong Guo, Frank Zhang, Suprovo Ghosh
1 links
IEEE Transactions on Terahertz Science and Technology
Radio Frequency Integrated Circuit Design
article

305-GHz Cascode SiGe HBT Power Amplifier With L-C Feedback Achieving P sat of 8.3 dBm

Kenneth K. O, Haidong Guo, Frank Zhang, Suprovo Ghosh
article en

Abstract

A 305-GHz power amplifier (PA) fabricated in a 130-nm SiGe HBT BiCMOS technology with HBT <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$f_{t} / f_{max}$</tex-math></inline-formula> = 350/450 GHz and Aluminum metallization is presented. The PA employs 4-way combined 4 pseudo-differential cascode amplification stages with a capacitive feedback network between the collector of common base stage and the base of common emitter stage that counters the gain degradation by neutralizing the input loss and capacitance of common emitter stage resulting from the device parasitics, transit time related phase delay effects and the interconnect inductances in the layout especially due to the unavoidable interconnect between the output of common-emitter and input of the common-base stage. The PA achieves a measured <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$P_{sat}$</tex-math></inline-formula> of 8.3 dBm, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$OP_{1dB}$</tex-math></inline-formula> of 6 dBm and a peak small signal gain of 14.5 dB at 305 GHz while consuming 880 mW of DC power from a 4-V supply. The PA exhibits the highest <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$P_{sat}$</tex-math></inline-formula>, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$OP_{1dB}$</tex-math></inline-formula> and the highest small signal gain at 305 GHz among the PA's fabricated using SiGe HBT's with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$f_{max}$</tex-math></inline-formula> less than 500 GHz.

IEEE Transactions on Terahertz Science and TechnologyVol. 16(1)
The University of Texas at Dallas (US)
Affordable and clean energy
Openalex Percentile: Top 82%
Radio Frequency Integrated Circuit Design
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