Demonstration of Ferroelectric Tunnel Field-Effect Transistor for Low Power Synapse Device

In this paper, a ferroelectric tunnel field-effect transistor (FeTFET) is demonstrated as a synapse device. The experimental results clearly show that there are several merits in FeTFET as a synapse device comparing with the FeFET. First, the FeTFET shows the ∼3 orders lower drain current than the FeFET thanks to the different carrier injection mechanism (i.e., band-to-band tunneling). Second, the memory window of FeTFET (1.48 V) is ∼1.5 times larger than the FeFET (0.95 V) due to an enhanced erase efficiency. As a result, the FeTFET shows the better training accuracy (∼91.5%) even with the ∼25 times lower energy consumption (∼0.16 mJ) comparing with the FeFET (∼90.4% accuracy with 4.06 mJ energy consumption). Lastly, the FeTFET shows a good retention property (> 10 years) with a ∼107 endurance characteristic. In short, the FeTFET can be a promising candidate for a low-power synapse device.