Compact XNOR Gate Using Flexible Oxide TFT Technology

This paper presents a novel compact XNOR gate, which is fabricated using uni-polar single-gate n-type oxide TFTs at low temperatures (≤150° C). The proposed two-input XNOR gate utilizes only two driving transistors and an active load (a diode-connected transistor), significantly reducing power consumption, design complexity, and active area. In contrast, implementing a conventional two-input XNOR gate with uni-polar transistor technology typically requires four 2-input NOR gates, which need at least 12 transistors. For a fair comparison, a traditional two-input NOR gate is characterized under identical conditions. Measurement response indicates that both gates exhibit similar power consumption (~1.5 mW) and operating frequency (75 kHz) under normal ambient conditions. These findings highlight that the XNOR gate achieves its functionality with almost one-fourth of the circuit complexity compared to a traditional design without compromising other performance metrics, such as speed and power consumption.